savantic semiconductor product specification silicon npn power transistors BU508DW d escription with to-247 package high voltage,high speed built-in damper diode applications for use in horizontal deflection circuits of colour tv receivers. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v i c collector current (dc) 8 a i cp collector current (pulse) 15 a i b base current (dc) 4 a i bm base current (pulse) 6 a p tot total power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-247) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU508DW characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 700 v v ce (sat) collector-emitter saturation voltage i c =4.5a ;i b =1.6a 1.0 v v be (sat) base-emitter saturation voltage i c =4.5a ;i b =2a 1.1 v i ces collector cut-off current v ce =1500v , v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =5.0v; i c =0 300 ma h fe dc current gain i c =500ma ; v ce =5v 10 30 v f diode forward voltage i f =4.5a 1.6 2.0 v f t transition frequency i e =0.1a ; v ce =5v 7 mhz c c collector capacitance v cb =10v;i e =0;f=1.0mhz 125 pf
savantic semiconductor product specification 3 silicon npn power transistors BU508DW package outline fig.2 outline dimensions
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